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AO8832 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8832 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its common-drain configuration. Standard Product AO8832 is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS (V) = 30V ID = 7A (VGS = 10V) RDS(ON) < 24m (VGS = 10V) RDS(ON) < 28m (VGS = 4.5V) RDS(ON) < 31m (VGS = 3.6V) RDS(ON) < 39m (VGS = 2.5V)
D1 TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 1.6K G2 1.6K
D2
S1
S2
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum 30 12 7 5.5 30 1.5 0.96 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 67 110 62
Max 85 130 75
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO8832
Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS=10V VDS=0V, IG=250uA VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=7A TJ=125C RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=5A VGS=3.6V, ID=5A VGS=2.5V, ID=4A gFS VSD IS Forward Transconductance VDS=5V, ID=7A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current 12 0.6 30 20 28 23 24.7 31 25 0.67 1 2.5 330 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 80 10 1.6 6.4 VGS=4.5V, VDS=15V, ID=7A 3.1 2.5 388 VGS=4.5V, VDS=15V, RL=2.2, RGEN=3 IF=7A, dI/dt=100A/s, VGS=-9V IF=7A, dI/dt=100A/s, VGS=-9V
2
Min 30
Typ
Max
Units V
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS BVGSO VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate-Source Breakdown Voltage Gate Threshold Voltage On state drain current
1 5 10 0.78 1.5 24 28 31 39
A A V V A
m
S V A pF pF pF k nC nC nC ns ns s s ns nC
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
992 2.7 1.9 16.6 7
A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 1: July 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO8832 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30 10V 3.5V 20 ID(A) VGS =2.5V ID(A) 20 15 125C 10 25C 5 0 0 1 2 3 4 5 VDS(Volts) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS(Volts) Figure 2: Transfer Characteristics 30 VDS=5V 25
10
VGS =2V
c Figure 1: On-Regions Characteristi s
40 VGS =2.5V Normalize ON-Resistance 30 RDS(ON)(m) VGS =3.6V
1.6 VGS=4.5V 1.4 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=10V ID=7A ID=5A VGS=2.5V ID=4A
20 VGS =4.5V 10 VGS =10V
0 0 5 10 15 20 ID(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
60 ID=7A 50 RDS(ON)(m) 40 30 20 10 0 2 4 6 8 10 VGS(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C IS(A)
1E+01 1E+00 1E-01 1E-02 1E-03 1E-04 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD(Volts) Figure 6: Body-Diode Characteristics 25C 125C
Alpha & Omega Semiconductor, Ltd.
AO8832 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
400 VDS=15V ID=7A Capacitance (pF) 350 300 250 200 150 100 50 0 0 2 4 6 8 0 5 10 15 20 25 30 VDS(Volts) Figure 8: Capacitance Characteristics Crss Coss Ciss
5 4 VGS(Volts) 3 2 1 0 Qg (nC) Figure 7: Gate-Charge Characteristics
100 TJ(Max)=150C, T A=25C 10s 10 100s RDS(ON) limited 1 DC 1ms 10ms 100m 1s 10s 10 100 Power (W) ID (Amps) 40 TJ(Max)=150C TA=25C
30
20
10
0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance D=T on/T TJ,PK=T A+PDM.ZJA.RJA RJA=85C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD Ton
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.

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